• DocumentCode
    976870
  • Title

    Optical phase modulation in an injection locked AlGaAs semiconductor laser

  • Author

    Kobayashi, S. ; Kimura, T.

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    18
  • Issue
    5
  • fYear
    1982
  • Firstpage
    210
  • Lastpage
    211
  • Abstract
    Optical phase modulation by injecting coherent CW light into a directly frequency modulated semiconductor laser is reported. Phase modulation was obtained at up to 800 MHz modulation frequency without distortion for a 1.6 GHz full locking bandwidth. A static phase shift of ¿ took place with a 0.48 mA bias current change in the injection locked laser. Experimental and theoretical results showed that the product of the normalised phase deviation by the frequency deviation and the cutoff modulation frequency is constant.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; optical modulation; phase modulation; semiconductor junction lasers; 1.6 GHz; 800 MHz; III-V semiconductor; coherent CW light; injection locked AlGaAs semiconductor laser; normalised phase deviation; optical phase modulation; static phase shift;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820144
  • Filename
    4246322