DocumentCode
976870
Title
Optical phase modulation in an injection locked AlGaAs semiconductor laser
Author
Kobayashi, S. ; Kimura, T.
Author_Institution
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Volume
18
Issue
5
fYear
1982
Firstpage
210
Lastpage
211
Abstract
Optical phase modulation by injecting coherent CW light into a directly frequency modulated semiconductor laser is reported. Phase modulation was obtained at up to 800 MHz modulation frequency without distortion for a 1.6 GHz full locking bandwidth. A static phase shift of ¿ took place with a 0.48 mA bias current change in the injection locked laser. Experimental and theoretical results showed that the product of the normalised phase deviation by the frequency deviation and the cutoff modulation frequency is constant.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; optical modulation; phase modulation; semiconductor junction lasers; 1.6 GHz; 800 MHz; III-V semiconductor; coherent CW light; injection locked AlGaAs semiconductor laser; normalised phase deviation; optical phase modulation; static phase shift;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820144
Filename
4246322
Link To Document