Title :
Low threshold current 1.3 μm InAsP/InGaAsP lasers grown by gas-source molecular beam epitaxy
Author :
Thiagarajan, P. ; Giudice, G.E. ; Temkin, H. ; Robinson, G.Y.
Author_Institution :
Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA
fDate :
6/6/1996 12:00:00 AM
Abstract :
InAsP/InGaAsP highly strained MQW lasers grown by gas source molecular beam epitaxy with low threshold currents are reported. Threshold currents as low as 1.1 mA at 20°C and 6.1 mA at 100°C were measured. Lasers with antireflection/high reflection coated facets exhibited slope efficiencies as high as 0.48 mW/mA and output powers of 65 mW at 20°C
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; quantum well lasers; semiconductor growth; 1.1 mA; 1.3 micron; 100 C; 20 C; 6.1 mA; 65 mW; InAsP-InGaAsP; antireflection coated facets; gas-source molecular beam epitaxy; high reflection coated facets; output powers; slope efficiencies; strained MQW lasers; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960700
