Title :
Electron mobility in degenerate tellurium doped In0.53Ga0.47As LPE layers
Author :
Claxton, P.A. ; Shirafuji, J. ; Houston, P.A. ; Robson, P.N.
Author_Institution :
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Abstract :
Tellurium doped In0.53Ga0.47As epitaxial layers have been grown by LPE in the range n=1018¿4×1019 cm¿3; the distribution coefficient of tellurium was found to be 0.1. These layers exhibit a two to three times higher mobility than InP or GaAs doped to the same level. Theoretically calculated values of mobility taking account of the degenerate and nonparabolic conduction band conditions are compared with the experimental data.
Keywords :
III-V semiconductors; carrier mobility; degenerate semiconductors; electronic conduction in crystalline semiconductor thin films; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor doping; semiconductor epitaxial layers; tellurium; III-V semiconductors; In0.53Ga0.47As:Te LPE layers; degenerate conduction band; distribution coefficient; electron mobility; nonparabolic conduction band;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820146
