Title :
Strain effects on InGaP-InGaAsP-GaAsP tensile strained quantum-well lasers
Author :
Uppal, Kushant ; Mathur, Atul ; Dapkus, P.D.
Author_Institution :
Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
Tensile strained InGaP-InGaAsP-GaAsP single quantum well broad area lasers have been grown by metalorganic chemical vapor deposition and the effects of strain on the device parameters have been studied. The lasing mode is found to be TE for a strain of -0.46% and TM for a strain of -0.71%. The role of barrier height in controlling gain and temperature dependence in this system is measured. A low threshold current density of 221 A/cm/sup 2/ has been obtained for a cavity length of 2.34 mm with -0.46% strain.<>
Keywords :
III-V semiconductors; chemical vapour deposition; current density; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser modes; quantum well lasers; semiconductor growth; 2.34 mm; InGaP-InGaAsP-GaAsP; InGaP-InGaAsP-GaAsP tensile strained quantum-well lasers; TE laser modes; TM laser modes; barrier height; cavity length; device parameters; gain dependence; lasing mode; low threshold current density; metalorganic chemical vapor deposition; single quantum well broad area lasers; strain effects; temperature dependence; Capacitive sensors; Chemical lasers; Chemical vapor deposition; Control systems; Laser modes; Quantum well lasers; Quantum wells; Tellurium; Temperature control; Tensile strain;
Journal_Title :
Photonics Technology Letters, IEEE
