• DocumentCode
    976903
  • Title

    An Integrated Experimental and Computational System for the Thermal Characterization of Complex Three-Dimensional Submicron Electronic Devices

  • Author

    Raad, Peter E. ; Komarov, Pavel L. ; Burzo, Mihai G.

  • Author_Institution
    Southern Methodist Univ., Dallas
  • Volume
    30
  • Issue
    4
  • fYear
    2007
  • Firstpage
    597
  • Lastpage
    603
  • Abstract
    This work presents the creation of a coupled analysis engine and experimental system capable of fully characterizing the thermal behavior of complex, 3D, active, submicron, electronic devices. First, the surface temperature field of an activated device is non-invasively measured with submicron spatial resolution. Next, the thermal conductivity of each thin-film layer composing the device is measured and a numerical model is built using these values. The measured temperature distribution map is then used as input for an ultra-fast inverse computational solution to fully characterize the thermal behavior of the complex 3D device. By bringing together measurement and computation, it becomes possible for the first time to non-invasively extract the 3D thermal behavior of nanoscale embedded features that cannot otherwise be accessed. The power of the method was demonstrated by verifying that it can extract details of interest of a representative MOSFET device.
  • Keywords
    MOSFET; nanoelectronics; semiconductor device measurement; thermal conductivity; thermal management (packaging); thin films; MOSFET device; complex three-dimensional submicron electronic devices; computational system; coupled analysis; integrated experimental system; nanoscale embedded features; numerical model; temperature distribution map; thermal characteristics; thermal conductivity; thin-film layer; ultra-fast inverse computational solution; Conductivity measurement; Distributed computing; Engines; Numerical models; Spatial resolution; Temperature distribution; Temperature measurement; Thermal conductivity; Thin film devices; Time measurement; Integrated circuit (IC) thermal factors; laser measurements; metal-oxide-semiconductor field-effect transistor (MOSFET); semiconductor defects; semiconductor device measurements; simulation software; thermoreflective thermography (TRTG); time domain measurements;
  • fLanguage
    English
  • Journal_Title
    Components and Packaging Technologies, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1521-3331
  • Type

    jour

  • DOI
    10.1109/TCAPT.2007.910043
  • Filename
    4383345