Title :
Silicon MOSFET distributed amplifier
Author :
Sullivan, P.J. ; Xavier, B.A. ; Costa, D. ; Ku, W.H.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
fDate :
6/6/1996 12:00:00 AM
Abstract :
The first reported integrated silicon MOSFET distributed amplifier is presented. A three stage distributed amplifier was fabricated on a standard 0.8 μm silicon CMOS foundry process and packaged in a SSO-24 plastic surface mount package. The required inductance needed for distributed amplification is realised by the parasitic inductance of the bond wires and lead frame inductance inside the plastic surface mount package. The distributed amplifier has a unity gain cutoff frequency of 4.7 GHz, a gain of 5 dB and an input referred third order intercept point of +15 dBm
Keywords :
CMOS analogue integrated circuits; distributed amplifiers; integrated circuit packaging; plastic packaging; surface mount technology; 0.8 micron; 4.7 GHz; 5 dB; CMOS foundry process; SSO-24 plastic surface mount package; Si; bond wires; cutoff frequency; gain; integrated silicon MOSFET distributed amplifier; intercept point; lead frame; parasitic inductance; three stage amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960699
