Title :
A 160-GHz fT and 140-GHz fmax submicrometer InP DHBT in MBE regrown-emitter technology
Author :
Yun Wei ; Scott, D.W. ; Yingda Dong ; Gossard, A.C. ; Rodwell, M.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
fDate :
5/1/2004 12:00:00 AM
Abstract :
We report a 0.7×8 μm2 InAlAs-InGaAs-InP double heterojunction bipolar transistor, fabricated in a molecular-beam epitaxy (MBE) regrown-emitter technology, exhibiting 160 GHz fT and 140 GHz fmax. These initial results are the first known RF results for a nonselective regrown-emitter heterojunction bipolar transistor, and the fastest ever reported using a regrown base-emitter heterojunction. The maximum current density is J/sub E/=8×105 A/cm2 and the collector breakdown voltage V/sub CEO/ is 6 V for a 1500-/spl Aring/ collector. In this technology, the dimension of base-emitter junction has been scaled to an area as low as 0.3×4 μm2 while a larger-area extrinsic emitter maintains lower emitter access resistance. Furthermore, the application of a refractory metal (Ti-W) base contact beneath the extrinsic emitter regrowth achieves a fully self-aligned device topology.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; 140 GHz; 1500 A; 160 GHz; 6 V; InAlAs-InGaAs-InP; base-emitter junction; collector breakdown voltage; double heterojunction bipolar transistor; emitter access resistance; extrinsic emitter regrowth; maximum current density; molecular-beam epitaxy; nonselective regrown-emitter heterojunction bipolar transistor; refractory metal base; regrown base-emitter heterojunction; self-aligned device topology; Chemical technology; Contact resistance; Dielectrics; Double heterojunction bipolar transistors; Germanium silicon alloys; Heterojunction bipolar transistors; Indium phosphide; Molecular beam epitaxial growth; Silicon compounds; Silicon germanium;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.826521
