Title :
Combined dry and wet etching techniques to form planar (011) facets in GaInAsP/InP double heterostructures
Author :
Coldren, Larry A. ; Furuya, Keiichi ; Miller, B.I. ; Rentschler, J.A.
Author_Institution :
Bell Laboratories, Holmdel, USA
Abstract :
Using angled reactive ion etching (RIE) and wet chemical etching (WCE), planar (011) facets have been exposed on (100) GaInAsP/InP double heterostructures for the first time. Positively sloped wall profiles observed previously for this orientation are eliminated by an initial RIE that cuts through the stop-etching (111)A plane. These (011) mirror facets are preferred over (011) for most state-of-the-art low-threshold lasers.
Keywords :
III-V semiconductors; etching; gallium arsenide; indium compounds; semiconductor junction lasers; GaInAsP/InP double heterostructures; III-V semiconductors; angled reactive ion etching; dry etching; integrated optics; lasers; planar (011) facets; sloped wall profiles; wet etching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820160
