Title :
1.5 ¿m GaInAsP/InP buried heterostructure lasers fabricated by hybrid combination of liquid- and vapour-phase epitaxy
Author :
Mikami, Osamu ; Nakagome, Hideki ; Yamauchi, Yuji ; Kanbe, H.
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
1.5 ¿m GaInAsP/InP buried heteostructure lasers been successfully fabricated by using a hybrid combination of liquid- (LPE) and vapour-phase epitaxy (VPE). Current confinement is achieved by the overgrown VPE high resistivity InP layer (electron concentration of less than 1015cm¿3). A threshold current of about 85 mA is obtained for a cavity length of about 200 ¿m and an active layer width of 4 ¿m.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.5 Mu m; GaInAsP/InP buried heterostructure lasers; III-V semiconductors; LPE; electron concentration; hybrid combination; threshold current; vapour-phase epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820161
