Title :
8 x 8 array of thin-film photodetectors vertically electrically interconnected to silicon circuitry
Author :
Fike, S.M. ; Buchanan, B. ; Jokerst, N.M. ; Brooke, M.A. ; Morris, T.G. ; DeWeerth, S.P.
Author_Institution :
Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
This paper reports the integration of an 8/spl times/8 array of thin-film GaAs-AlGaAs photodetectors onto a silicon-oscillator array circuit for massively parallel-image processing applications. Each detector was electrically connected to the oscillator below it using vertical electrical interconnections. Both sides of the thin-film devices were metallized for electrical contact, which minimized the interconnection density on the silicon circuit, thereby maximizing the available signal processing area. The yield of this integrated array and associated circuit was 100%, with the majority of pixels demonstrating a dynamic range of 50 dB.<>
Keywords :
III-V semiconductors; aluminium compounds; digital signal processing chips; gallium arsenide; image processing; integrated circuit interconnections; integrated optoelectronics; optical interconnections; photodetectors; thin film circuits; 8/spl times/8 array; GaAs-AlGaAs; GaAs-AlGaAs photodetectors; dynamic range; electrical contact; integrated array; interconnection; interconnection density minimisation; massively parallel-image processing applications; metallized; pixels; signal processing area; signal processing circuits; silicon circuit; silicon circuitry; silicon-oscillator array circuit; thin-film devices; thin-film photodetectors; vertical electrical interconnections; vertically electrically interconnected; Contacts; Detectors; Integrated circuit interconnections; Metallization; Oscillators; Photodetectors; Semiconductor thin films; Thin film circuits; Thin film devices; Transistors;
Journal_Title :
Photonics Technology Letters, IEEE
