DocumentCode
977085
Title
Simulation of GaAs p-i-n diodes
Author
Gopinath, A. ; Atwater, H.
Author_Institution
MIT Lincoln Lab., Lexington, MA, USA
Volume
35
Issue
4
fYear
1988
fDate
4/1/1988 12:00:00 AM
Firstpage
414
Lastpage
417
Abstract
GaAs p-i-n diodes have been modeled using numerical simulation, and the theoretical results have been compared to those of experiment. The simulations predict that with a lifetime of the carriers of 10-7 s, devices that have good i-layer modulation may be built. This is in agreement with currently available commercial devices
Keywords
III-V semiconductors; carrier lifetime; gallium arsenide; semiconductor device models; semiconductor diodes; semiconductor switches; solid-state microwave devices; 100 ns; GaAs; GaAs p-i-n diodes; currently available commercial devices; i-layer modulation; numerical simulation; semiconductors; theoretical results; Charge carrier processes; Contact resistance; Equivalent circuits; Gallium arsenide; Laboratories; P-i-n diodes; Photodetectors; Predictive models; Resistors; Switches;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.2473
Filename
2473
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