Title :
Simulation of GaAs p-i-n diodes
Author :
Gopinath, A. ; Atwater, H.
Author_Institution :
MIT Lincoln Lab., Lexington, MA, USA
fDate :
4/1/1988 12:00:00 AM
Abstract :
GaAs p-i-n diodes have been modeled using numerical simulation, and the theoretical results have been compared to those of experiment. The simulations predict that with a lifetime of the carriers of 10-7 s, devices that have good i-layer modulation may be built. This is in agreement with currently available commercial devices
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; semiconductor device models; semiconductor diodes; semiconductor switches; solid-state microwave devices; 100 ns; GaAs; GaAs p-i-n diodes; currently available commercial devices; i-layer modulation; numerical simulation; semiconductors; theoretical results; Charge carrier processes; Contact resistance; Equivalent circuits; Gallium arsenide; Laboratories; P-i-n diodes; Photodetectors; Predictive models; Resistors; Switches;
Journal_Title :
Electron Devices, IEEE Transactions on
