• DocumentCode
    977108
  • Title

    Hydrogen-induced DLTS signal in pd/n-Si Schottky diodes

  • Author

    Petty, Michael C.

  • Author_Institution
    University of Durham, Department of Applied Physics & Electronics, Durham, UK
  • Volume
    18
  • Issue
    8
  • fYear
    1982
  • Firstpage
    314
  • Lastpage
    316
  • Abstract
    An investigation is reported into the electrical properties of palladium/silicon oxide/n-type silicon Schottky-barrier-type structures. On exposure to hydrogen a large increase in the DLTS signal is observed. This is thought to be associated with the production of electron trapping centres. Analysis reveals the presence of two traps, both located near the silicon surface.
  • Keywords
    Schottky-barrier diodes; deep level transient spectroscopy; electric sensing devices; elemental semiconductors; hydrogen; palladium; silicon; H2 induced DLTS signal; H2 sensors; Pd/n-Si Schottky diodes; deep level transient spectroscopy; electrical properties; production of electron trapping centres; solid state gas sensors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820214
  • Filename
    4246346
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=977108