Title :
Vertical p-i-n polysilicon diode with antifuse for stackable field-programmable ROM
Author :
Herner, S.B. ; Bandyopadhyay, A. ; Dunton, S.V. ; Eckert, V. ; Gu, J. ; Hsia, K.J. ; Hu, S. ; Jahn, C. ; Kidwell, D. ; Konevecki, M. ; Mahajani, M. ; Park, K. ; Petti, C. ; Radigan, S.R. ; Raghuram, U. ; Vienna, J. ; Vyvoda, M.A.
Author_Institution :
Matrix Semicond., Santa Clara, CA, USA
fDate :
5/1/2004 12:00:00 AM
Abstract :
A field-programmable, stackable memory cell using 0.15-μm technology is demonstrated. Vertical polycrystalline silicon diodes are stacked on top of one another, with tungsten (with TiN adhesion film) interconnect wires. An SiO2 antifuse film separates the top of each diode from the TiN-W films. The cell is programmed when sufficient biasing voltage is applied to break down the antifuse, connecting the diode to tungsten. The cell is unprogrammed when the antifuse is intact. Cell fabrication and performance are described.
Keywords :
CMOS memory circuits; elemental semiconductors; p-i-n diodes; parallel memories; read-only storage; semiconductor device manufacture; semiconductor storage; silicon; 0.15 micron; SiO/sub 2/; TiN-W; adhesion film; antifuse film; cell fabrication; device performance; field-programmable stackable memory cell; interconnect wires; p-i-n diode; polysilicon; read-only memories; submicron technology; vertical polycrystalline silicon diodes; voltage bias; Adhesives; P-i-n diodes; PIN photodiodes; Read only memory; Semiconductor films; Silicon; Tin; Tungsten; Voltage; Wires;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.827287
