Encapsulant-free annealing of ion-implanted GaP

GaP diodes were fabricated by Mg+ implantation and controlled atmosphere annealing. At room temperature, these diodes emit green light under forward bias, with an ideality factor of 2.0. Reverse breakdown voltages are 180 V, with a measured reverse leakage current density of 4.8 × 10¿9 A/cm2 at a bias of ¿3 V. The diodes retain good electrical characteristics at 400°C.