A new current scaling pixel circuit for AMOLED

Author

Lee, Jae-Hoon ; Nam, Woo-Jin ; Jung, Sang-Hoon ; Han, Min-Koo

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., South Korea

Volume

25

Issue

5

fYear

2004

fDate

5/1/2004 12:00:00 AM

Firstpage

280

Lastpage

282

Abstract

A new active-matrix organic light-emitting diode (AMOLED) pixel design, composed of four polycrystalline silicon thin-film transistor (poly-Si TFT) and one capacitor, is proposed by employing a novel current scaling scheme. The simulation results, based on the measured characteristics of an OLED and poly-Si TFTs, show that the proposed pixel design would scale down the data current more effectively, so as to guarantee a lower charging time compared with the conventional current mirror structure, as well as successfully compensate the variation of the electrical characteristics of the poly-Si TFTs, such as the threshold voltage and mobility.

Keywords

organic light emitting diodes; organic semiconductors; semiconductor device measurement; thin film transistors; Si; active-matrix organic light-emitting diode; capacitor; charging time; current mirror structure; current scaling; electrical characteristics; electron mobility; excimer laser annealing; pixel design; polycrystalline silicon thin-film transistor; threshold voltage; Active matrix organic light emitting diodes; Active matrix technology; Capacitors; Circuit simulation; Current measurement; Electric variables measurement; Organic light emitting diodes; Silicon; Thin film transistors; Time measurement;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.826567

Filename

1295107