A high-resolution active matrix using p-channel SOI TFTs

Author

Mimura, Akio ; Ohwada, Jun-ichi ; Hosokawa, Yoshikazu ; Suzuki, Takaya ; Kawakami, Hideaki ; Miyata, Kenji

Author_Institution

Hitachi Ltd., Ibaraki, Japan

Volume

35

Issue

4

fYear

1988

fDate

4/1/1988 12:00:00 AM

Firstpage

418

Lastpage

425

Abstract

A high-quality silicon-on-insulator (SOI) layer with 3-in-diameter quartz substrate and connected silicon islands was fabricated by a radio-frequency-heated zone-melting-recrystallization method. The whole area was successfully recrystallized and 95% of the silicon layer had a (100) surface. A p-channel thin-film transistor (TFT) with a mobility of 150-200 cm²/V-s and a high on-off ratio of 10⁶ under illumination was fabricated. Using these TFTs, a high-resolution active matrix was fabricated and a high-contrast transmissive-type liquid-crystal display was achieved. Successful operation of logic circuits with the same frequency as the bulk devices indicated the possibility of monolithic driver integration

Keywords

field effect integrated circuits; integrated circuit technology; liquid crystal displays; thin film transistors; (100) surface; 3 in; 3-in-diameter quartz substrate; LCD displays; RF recrystallization; SOI; Si-SiO₂; TFT; connected silicon islands; high-contrast transmissive-type liquid-crystal display; high-resolution active matrix; mobility of 150-200 cm²/V-s; on-off ratio of 10⁶; p-channel thin-film transistor; radio-frequency-heated zone-melting-recrystallization; silicon-on-insulator; Crystallization; Epitaxial growth; Joining processes; Large scale integration; Liquid crystal displays; Logic circuits; Radio frequency; Silicon on insulator technology; Substrates; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2474

Filename

2474