DocumentCode
977188
Title
Fabrication and characterization of an InAs0.96Sb0.04 photodetector for MIR applications
Author
Chakrabarti, P. ; Krier, A. ; Huang, X.L. ; Fenge, P.
Author_Institution
Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Volume
25
Issue
5
fYear
2004
fDate
5/1/2004 12:00:00 AM
Firstpage
283
Lastpage
285
Abstract
In this letter, we report an InAsSb p+-n junction photodetector grown on InAs substrate by liquid phase epitaxy. Electrical and optical characterizations of the device have been carried out at room temperature for operation of the device in the mid-infrared region. The study revealed that the dark current of the photodetector under reverse bias is dominated by a trap-assisted tunnelling current component, which degrades the detectivity of the device. Further, by operating the device at a suitable low reverse bias it is possible to improve the room-temperature detectivity significantly as compared to its value at zero bias.
Keywords
III-V semiconductors; indium compounds; infrared detectors; liquid phase epitaxial growth; photodetectors; semiconductor device manufacture; semiconductor epitaxial layers; 293 to 298 K; InAs-InAsSb; InAs0.96Sb0.04; MIR photodetector; dark current; device detectivity; electrical characterization; liquid phase epitaxy; mid-infrared region; optical characterization; p-n junction photodetector; reverse bias; room temperature; substrate; trap-assisted tunneling; trap-assisted tunnelling current; zero-bias resistance area product; Dark current; Detectors; Fabrication; Optical sensors; Optical superlattices; Photodetectors; Radiative recombination; Substrates; Temperature; Tunneling;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2004.826979
Filename
1295108
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