Title :
TEG in LP-MO CVD Ga0.47In0.53As-InP superlattice
Author :
Razeghi, M. ; Poisson, M.A. ; Larivain, J.P. ; de Cremoux, B. ; Duchemin, J.P. ; Voos, M.
Author_Institution :
Thomson-CSF, Orsay, France
Abstract :
We report the first successful growth of Ga0.47In0.53As-InP superlattice by the low-pressure metalorganic chemical vapour deposition technique, and evidence for TEG properties in these structures.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor superlattices; vapour phase epitaxial growth; III-V semiconductors; LP-MO CVD Ga0.47In0.53As-InP superlattice; two-dimensional electron gas properties;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820231
