Title :
Optimization of RF linearity in DG-MOSFETs
Author :
Kaya, Savas ; Ma, Wei
Author_Institution :
Russ Coll. of Eng. & Technol., Ohio Univ., Athens, OH, USA
fDate :
5/1/2004 12:00:00 AM
Abstract :
RF linearity of double-gate (DG) MOSFETs is investigated using accurate two-dimensional simulations. It is shown that the asymmetric DG-MOSFET is more linear than the symmetric counterpart and that DG-MOSFET linearity can be improved by a careful optimization of channel thickness, nonuniform doping profile and gate work function. For optimum linearity, a nonuniform doping profile and a thick (∼20 nm) silicon-on-insulator (SOI) layer is required. An intuitive description of this optimization is presented.
Keywords :
MOSFET; circuit optimisation; circuit simulation; linearisation techniques; semiconductor device models; silicon-on-insulator; DG-MOSFET; RF linearity optimization; SOI layer; asymmetric DG MOSFET; double-gate MOSFET; gate work function; intermodulation distortion; nonuniform doping profile; optimum linearity; semiconductor device modeling; silicon-on-insulator; Circuits; Design optimization; Doping profiles; Electrons; Linearity; MOSFETs; Radio frequency; Semiconductor device modeling; Silicon on insulator technology; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.826539
