• DocumentCode
    977308
  • Title

    Modeling of nanoscale gate-all-around MOSFETs

  • Author

    Jiménez, D. ; Saenz, J.J. ; Iñíguez, B. ; Suñé, J. ; Marsal, L.F. ; Pallarés, J.

  • Author_Institution
    Dept. d´´Enginyeria Electron., Univ. Autonoma de Barcelona, Spain
  • Volume
    25
  • Issue
    5
  • fYear
    2004
  • fDate
    5/1/2004 12:00:00 AM
  • Firstpage
    314
  • Lastpage
    316
  • Abstract
    We present a compact physics-based model for the nanoscale gate-all-around MOSFET working in the ballistic limit. The current through the device is obtained by means of the Landauer approach, being the barrier height the key parameter in the model. The exact solution of the Poisson´s equation is obtained in order to deal with all the operation regions tracing properly the transitions between them.
  • Keywords
    MOSFET; Poisson equation; nanotechnology; semiconductor device models; Landauer approach; MOSFET modeling; Poisson equation; nanoscale gate-all-around MOSFET; physics-based model; quantum wires; transition tracing; Boundary conditions; CMOS technology; Cathodes; Electrons; MOSFETs; Particle scattering; Poisson equations; Scalability; Silicon; Wire;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2004.826526
  • Filename
    1295118
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=977308