• DocumentCode
    977328
  • Title

    Impact of band structure on charge trapping in thin SiO2/Al2O3/poly-Si gate stacks

  • Author

    Pantisano, L. ; Lucci, L. ; Cartier, E. ; Kerber, A. ; Groeseneken, G. ; Green, M. ; Selmi, L.

  • Author_Institution
    Interuniversity Microelectron. Center, Leuven, Belgium
  • Volume
    25
  • Issue
    5
  • fYear
    2004
  • fDate
    5/1/2004 12:00:00 AM
  • Firstpage
    320
  • Lastpage
    322
  • Abstract
    Electron and hole trapping were studied in sub-2-nm SiO2/Al2O3/poly-Si gate stacks. It was found that during substrate injection, electron trapping is the dominant mechanism. Conversely, during gate injection both hole and electron trapping can be observed, depending on the applied bias. These hot carrier effects are closely linked to the band structure of SiO2/Al2O3/poly-Si system.
  • Keywords
    aluminium compounds; band structure; charge injection; electron traps; elemental semiconductors; hole traps; hot carriers; semiconductor-insulator boundaries; silicon; silicon compounds; 2 nm; SiO2-Al2O3-Si; band structure; charge trapping; electron trapping; gate injection; hole trapping; hot carrier effects; poly-Si gate stacks; polysilicon; substrate injection; Annealing; CMOS technology; Charge carrier processes; Dielectric materials; Electron traps; Hot carrier effects; Microelectronics; NIST; Stress; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2004.826534
  • Filename
    1295120
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=977328