Title :
A CMOS differential tesla-volt multiplier cell
Author :
Li, Z.Q. ; Sun, X.W.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fDate :
5/1/2004 12:00:00 AM
Abstract :
A fully CMOS process-compatible differential Tesla-Volt multiplier cell is proposed. It is made of a pair of identical split-drain magnetic field-effect transistors. An absolute and a relative Tesla-Volt multiplying with sensitivities of 2.85μA/VT and 1.2%/VT, respectively, have been measured. The double-balanced configuration gives a good linearity of the Tesla-Volt multiplying function.
Keywords :
CMOS analogue integrated circuits; field effect transistors; integrated circuit design; voltage multipliers; CMOS differential tesla-volt multiplier cell; CMOS process-compatibility; MAGFET; TVM; double-balanced configuration; integrated magnetic field sensors; split-drain magnetic field effect transistors; tesla-volt multiplying function; CMOS process; Choppers; Low-frequency noise; MOSFETs; Magnetic field measurement; Magnetic fields; Magnetic flux; Magnetic flux density; Magnetic sensors; Sun;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.826530
