Title :
Optical receiver front-end nonlinear distortion
Author :
Nakamura, Mitsutoshi ; Tamura, Takuya ; Ozeki, Takashi
Author_Institution :
Toshiba Corporation, Electronics Equipment Laboratory, Toshiba Research & Development Center, Kawasaki, Japan
Abstract :
The harmonic modulation products of a PIN-GaAs MESFET optical receiver front end are found to be about 20 dB smaller than those of a PIN-bipolar transistor front end, using the `two-frequency optical signal method¿. It is pointed out that the design parameters in the PIN-GaAs MESFET front end, optimised from the high-sensitivity viewpoint, are compatible with the requirements for low distortion in analogue transmission systems.
Keywords :
Schottky gate field effect transistors; field effect transistor circuits; optical communication equipment; photodetectors; photodiodes; receivers; PIN-GaAs MESFET optical receiver front end; analogue transmission systems; harmonic modulation products; nonlinear distortion; optical communication equipment; p-i-n photodiode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820247
