Title :
Thin MBE GaAs millimetre-wave mixer diode using Ge substrate
Author :
Christou, A. ; Davey, J.E. ; Covington, D.
Author_Institution :
Naval Research Laboratory, Washington, USA
Abstract :
Thin substrateless MBE GaAs diodes have been processed for mixer applications. MBE growth of an inverted n/n+ GaAs structure on Ge was achieved. The Ge substrate was removed by preferential etching. A noise figure of less than 6.0 dB at 94 GHz was obtained.
Keywords :
III-V semiconductors; gallium arsenide; mixers (circuits); molecular beam epitaxial growth; semiconductor diodes; semiconductor epitaxial layers; solid-state microwave devices; 94 GHz; Ge substrate; MBE GaAs diodes; MM-wave mixer diode; microwave device; n/n+ GaAs structure on Ge; noise figure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820251
