DocumentCode :
977521
Title :
Uniqueness problems in compact HBT models caused by thermal effects
Author :
Rudolph, Matthias
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin, Germany
Volume :
52
Issue :
5
fYear :
2004
fDate :
5/1/2004 12:00:00 AM
Firstpage :
1399
Lastpage :
1403
Abstract :
This paper identifies possible numerical instabilities in compact HBT models, which are introduced by a physical meaningful self-heating description. Removing these possible sources of nonconvergence would deteriorate model accuracy since they originate from the device physics. It is, therefore, necessary to be aware of them during parameter extraction and circuit simulation.
Keywords :
heterojunction bipolar transistors; numerical stability; semiconductor device models; circuit simulation; compact HBT models; nonconvergence; numerical instabilities; parameter extraction; self-heating; thermal effects; uniqueness problems; Circuit simulation; Diodes; FETs; Heterojunction bipolar transistors; Numerical models; Numerical stability; Robustness; Solid modeling; Temperature dependence; Temperature distribution;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2004.827007
Filename :
1295138
Link To Document :
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