Title :
Frequency divider using InAlAs/InGaAs HEMT DCFL-NOR gates
Author :
Harada, Nobohiro ; Kuroda, Sho ; Watanabe, Yoshihiro ; Hikosaka, K.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
Examines a divide-by-four circuit based on DCFL-NOR gates using a newly developed enhancement-mode n-InAlAs/InGaAs HEMT technology. A divider, with gates 1.2 mu m long, had a maximum clock frequency of 5.8GHz and a power dissipation of 2.5mW/gate. It was found that the switching speed of an InP-based HEMT is 1.5 times faster than that of a GaAs-based HEMT.
Keywords :
III-V semiconductors; NOR circuits; aluminium compounds; direct coupled FET logic; dividing circuits; field effect integrated circuits; gallium arsenide; indium compounds; integrated logic circuits; 5.8 GHz; III-V semiconductors; InAlAs-InGaAs; InAlAs/InGaAs HEMT DCFL-NOR gates; divide-by-four circuit; enhancement-mode technology; maximum clock frequency; power dissipation; switching speed;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931404
