Title :
Three-dimensional CMOS NAND with three stacked channels
Author :
Roos, G. ; Hoefflinger, B.
Author_Institution :
Inst. for Microelectron., Stuttgart, Germany
Abstract :
A process-inherent NAND2 device is presented for a three-dimensional CMOS integration with epitaxial lateral overgrowth and chemo-mechanical polishing. The required ´OR´ function of the two PMOS transistors is achieved by one silicon volume, which is controlled by a back gate and a conventional front gate. Almost symmetrical characteristics are measured for the front and the back gates.
Keywords :
CMOS integrated circuits; integrated logic circuits; logic gates; 3D CMOS gate; OR function; PMOS transistors; back gate; chemo-mechanical polishing; epitaxial lateral overgrowth; front gate; process-inherent NAND2 device; symmetrical characteristics; three stacked channels; three-dimensional CMOS NAND;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931406
