50-GHz SiGe HBT distributed amplifiers employing constant-k and m-derived filter sections

Author

Aguirre, Jorge ; Plett, Calvin

Author_Institution

Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada

Volume

52

Issue

5

fYear

2004

fDate

5/1/2004 12:00:00 AM

Firstpage

1573

Lastpage

1579

Abstract

This paper describes two single-ended three-stage SiGe HBT distributed amplifiers employing constant-k filter sections, m-derived filter sections, and a metal or a deep-trench ground plane in the artificial transmission lines. The distributed amplifiers exhibit a measured passband of 100 MHz-50 GHz; they have a small die size (1.0×1.1 mm²) and low power consumption (125 mW). The measured results demonstrate that distributed amplifiers in SiGe can be competitive with those in III-V processes.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; distributed amplifiers; heterojunction bipolar transistors; power consumption; power transmission lines; 100 MHz to 50 GHz; 125 mW; SiGe; SiGe HBT distributed amplifiers; SiGe amplifier; artificial transmission lines; deep trench ground plane; filter; passband; power consumption; Distributed amplifiers; Filters; Germanium silicon alloys; Heterojunction bipolar transistors; Passband; Power measurement; Power transmission lines; Silicon germanium; Size measurement; Transmission line measurements;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2004.827049

Filename

1295157