Title :
8.5W CW 2.0 mu m InGaAsP laser diodes
Author :
Osinski, J.S. ; Welch, D.F.
Abstract :
Data are presented on strained-layer InGaAs/InGaAsP double quantum well laser diodes operating at 2.0 mu m. A 200 mu m broad area laser diode produces 1.1W continuous wave (CW). The spectral full width at half maximum is 10nm at 0.63W CW and broadens to 17nm at an output power of 1.03W CW. A 1000h lifetest is presented. A power of 8.5W CW is achieved from a monolithic array of broad array laser diodes.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser transitions; life testing; semiconductor laser arrays; semiconductor lasers; 0.63 W; 1.03 W; 1.1 W; 1000 h; 2.0 micron; 200 micron; 8.5 W; CW; InGaAs-InGaAsP; broad area laser diode; continuous wave; lifetest; monolithic array; output power; spectral full width; strained-layer InGaAs/InGaAsP double quantum well laser diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931412
