Title :
Blue-green laser diode operation of CdZnSe/ZnSe MQW structures grown on InGaP band offset reduction layers
Author :
Onomura, Masaaki ; Ishikawa, Masatoshi ; Nishikawa, Yoshihiro ; Saito, Sakuyoshi ; Parbrook, P.J. ; Nitta, Katsumi ; Rennie, J. ; Hatakoshi, G.
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
A novel contact technology using In(Ga,Al)P layers, lattice matched to p-type GaAs, is proposed for low voltage operation in ZnSe-based laser diodes (LDs). Laser operation is demonstrated at 77K in CdZnSe/ZnSe multiquantum well LDs grown on InGaP band offset reduction layers for the first time.
Keywords :
II-VI semiconductors; cadmium compounds; laser transitions; molecular beam epitaxial growth; semiconductor growth; semiconductor lasers; zinc compounds; 77 K; CdZnSe-ZnSe; CdZnSe/ZnSe MQW structures; In(Ga,Al)P layers; InGaAlP-GaAs; InGaP; InGaP band offset reduction layers; MBE; ZnSe-based laser diodes; blue-green laser diode operation; contact technology; laser operation; lattice matched; low voltage operation; multiquantum well LD; p-type GaAs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931413
