Title :
High power emission from strained DQW circular-grating surface-emitting DBR lasers
Author :
Fallahi, Mahmoud ; Dion, M. ; Chatenoud, F. ; Templeton, I.M. ; Barber, Ramon
Author_Institution :
Nat. Res. Council of Canada, Ottawa, Ont., Canada
Abstract :
High power operation of circular-grating surface-emitting distributed Bragg reflector lasers is demonstrated. The structure is a strained InGaAs/GaAs double quantum well grown by one step MBE. Circular gratings are defined by electron beam lithography. A surface emission power over 100mW is obtained.
Keywords :
diffraction gratings; distributed Bragg reflector lasers; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor lasers; 100 mW; InGaAs-GaAs; InGaAs/GaAs; distributed Bragg reflector lasers; double quantum well; electron beam lithography; high power emission; high power operation; one step MBE; strained DQW circular-grating surface-emitting DBR lasers; strained double quantum well; surface emission power;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931415
