Polysilicon transistors fabricated on silicon implanted amorphous silicon

Author

Ipri, A.C. ; Policastro, S. ; Pancholy, D.

Author_Institution

David Sarnoff Res. Center, Princeton, NJ, USA

Volume

37

Issue

1

fYear

1990

fDate

1/1/1990 12:00:00 AM

Firstpage

313

Lastpage

314

Abstract

1500-Å-thick low-pressure chemical vapor deposition (LPCVD) polysilicon films deposited in the amorphous state at 560°C have been self-implanted with silicon at doses between 1×10¹⁵/cm² and 5×10¹⁵/cm ². n- and p-channel MOS transistors fabricated in these films using a 650°C process exhibit a peak in the field-effect mobilities at an implant dose of 2×10¹⁵/cm². The mobilities improved from nonimplant values of 28(n) and 15(p) to peak values of 64(n) and 45(p) cm²/V-s

Keywords

CVD coatings; amorphous semiconductors; carrier mobility; elemental semiconductors; insulated gate field effect transistors; ion implantation; semiconductor thin films; silicon; 1500 Å; 560 degC; 650 degC; LPCVD; amorphous Si:Si; field-effect mobilities; implant dose; n-channel MOS transistors; nonimplant values; p-channel MOS transistors; polysilicon films; polysilicon transistors; self-implanted; Amorphous silicon; Annealing; Charge carrier processes; Electron mobility; Grain size; Implants; MOS devices; MOSFETs; Semiconductor films; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.43835

Filename

43835