Abstract :
Data are presented describing strained-layer distributed Bragg reflector (DBR) InGaAs/GaAs laser diodes operating at lambda =1083nm with single transverse and longitudinal mode behaviour beyond 200mW CW. The threshold current of these lasers is approximately 30mA, with a differential quantum efficiency of 65 %. The total efficiency is 27% at an output power of 100mW. The thermal and current tuning is approximately 0.8 AA/deg and 0.02-0.04 AA/mA, respectively.
Keywords :
distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser modes; laser tuning; reflectivity; semiconductor lasers; 100 mW; 1083 nm; 200 mW; 27 percent; 30 mW; 65 percent; CW; DBR laser diodes; InGaAs-GaAs; InGaAs/GaAs; current tuning; differential quantum efficiency; distributed Bragg reflector laser diodes; longitudinal mode; output power; single transverse mode; singlemode; strained-layer; thermal tuning; threshold current; total efficiency;
