DocumentCode
977825
Title
New chemical etching solution for InP and GaInAsP gratings
Author
Saitoh, Takashi ; Mikami, Osamu ; Nakagome, Hideki
Author_Institution
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Volume
18
Issue
10
fYear
1982
Firstpage
408
Lastpage
409
Abstract
A new chemical etching solution of bromine-water system, which is suitable for transforming the fine resist grating mask pattern onto InP and GaInAsP surfaces, is reported. The Br2:H2O:H3PO4 (or HCl) solution does not dissolve AZ 1350 photoresist and exhibits both moderate etching rate and a pit-free etched surface.
Keywords
III-V semiconductors; etching; gallium arsenide; indium compounds; AZ 1350 photoresist; Br water system; Br2:H2O:H3PO4; GaInAsP gratings; III-V semiconductors; InP gratings; chemical etching solution; fine resist grating mask pattern; pit-free etched surface;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820280
Filename
4246414
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