Title :
Room-temperature CW operation of 1.60 ¿m GaInAsP/InP buried-heterostructure integrated laser with butt-jointed built-in distributed-Bragg-reflection waveguide
Author :
Abe, Y ; Kishino, K. ; Tanbun-Ek, T. ; Arai, S. ; Koyama, F. ; Matsumoto, K. ; Watanabe, T. ; Suematsu, Y.
Author_Institution :
Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan
Abstract :
CW operation of a 1.60 ¿m GaInAsP/InP buried-heterostructure integrated laser with butt-jointed built-in distributed-Bragg-reflection waveguide (BH BJB DBR integrated laser) was achieved at room temperature. Single longitudinal-mode operation at fixed mode was obtained in a temperature range of about 60 deg C, under the CW condition, and it was also maintained under rapid direct modulation of 1.6 GHz.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; integrated optics; laser modes; semiconductor junction lasers; waveguides; 1.60 micron operation III-V semiconductors; Butt-jointed built-in distributed-Bragg-reflection waveguide; GaInAsP/InP buried-heterostructure integrated laser; room temperature CW operation; single longitudinal mode operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820281
