Title :
Substrate effects on performance of InP MOSFETs
Author :
Woodward, J. ; Brown, G.T. ; Cockayne, B. ; Cameron, D.C.
Author_Institution :
Royal Signals & Radar Establishment, Great Malvern, UK
Abstract :
InP MOSFET devices with a SiO2 dielectric layer have been fabricated on p-type and SI substrates. Surface mobilities in the range 250 to 750 cm2 V¿1 s¿1 have been routinely obtained from all substrates except those from one crystal of Fe-doped SI InP. Defect etching studies have revealed large prismatic dislocation loops in this crystal. A correlation between these observations is proposed.
Keywords :
III-V semiconductors; indium compounds; insulated gate field effect transistors; substrates; III-V semiconductors; InP MOSFETS; SiO2 dielectric layer; defect etching; prismatic dislocation loops; substrate effects; surface mobilities;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820285
