Title :
Single-crystal metal-semiconductor microjunctions prepared by molecular beam epitaxy
Author :
Cho, A.Y. ; Kollberg, E. ; Zirath, H. ; Snell, W.W. ; Schneider, M.V.
Author_Institution :
Bell Laboratories, Murray Hill, USA
Abstract :
The electrical properties and the fabrication of single-crystal Al on GaAs microjunctions are described. The devices have a lower barrier height and smaller excess noise at high current densities than junctions prepared by conventional metal-deposition techniques. The improved noise properties are obtained by the elimination of nonuniform current conduction due to oxide clusters at the metal-semiconductor interface.
Keywords :
III-V semiconductors; aluminium; gallium arsenide; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor-metal boundaries; Al-GaAs microjunctions; III-V semiconductor; barrier height; electrical properties; excess noise; fabrication; molecular beam epitaxy; oxide clusters; single-crystal metal-semiconductor microjunctions;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820290