Title :
Monolithic integration of In0.2Ga0.8As vertical-cavity surface-emitting lasers with resonance-enhanced quantum well photodetectors
Author :
Ortiz, G.G. ; Hains, C.P. ; Cheng, J. ; Hou, H.Q. ; Zolper, J.C.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
fDate :
6/20/1996 12:00:00 AM
Abstract :
Vertical-cavity surface-emitting lasers (VCSELs) have been monolithically integrated with resonance-enhanced photo-detectors (REPDs) using a single epilayer design, to produce a simple array of sources and detectors for optical interconnect applications. The detectors, which contain a three quantum well InGaAs absorption region, achieve quantum efficiencies as high as 85%, and the VCSELs achieved threshold current densities as low as 850 A/cm2 and differential quantum efficiencies as high as 50%
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical interconnections; photodetectors; semiconductor laser arrays; semiconductor quantum wells; surface emitting lasers; 50 percent; 85 percent; In0.2Ga0.8As; differential quantum efficiencies; optical interconnect applications; quantum efficiencies; resonance-enhanced quantum well photodetectors; single epilayer design; threshold current densities; vertical-cavity surface-emitting lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960782
