Title :
Narrow bandwidth long wavelength resonant cavity photodiodes
Author :
Corbett, Brandon ; Considine, L. ; Walsh, Steve ; Kelly, W.M.
Author_Institution :
Nat. Microelectron. Res. Centre, Univ. Coll. Cork, Ireland
Abstract :
Resonant cavity photodetectors at 1.53 mu m are demonstrated using the epitaxial liftoff technique to position an epilayer structure between two metallic mirrors. The epilayer consists of a p-i-n structure with quantum wells placed strategically at the antinodes of the fabricated cavity. The quality factor of the 1.16 mu m long cavity is 59 corresponding to mirror reflectivies of 94 and 90%.
Keywords :
Q-factor; cavity resonators; p-i-n photodiodes; photodetectors; semiconductor quantum wells; 1.16 micron; 1.53 micron; InGaAsP-InGaAs-InP; InP; epilayer structure; epitaxial liftoff technique; long wavelength; metallic mirrors; narrow bandwidth; p-i-n structure; photodetectors; quality factor; quantum wells; resonant cavity photodiodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931436
