Amorphous silicon TFT capacitance model using an effective temperature approach

An analytical capacitance model for a-Si:H thin film transistors, that considers deep and tail states simultaneously, is presented. Using an effective temperature approach and a charge-oriented concept, the localised deep and tail states have been considered in the capacitance model. As verified by the published data, this analytical capacitance model provides an accurate prediction of the C-V characteristics of an a-Si:H thin film transistor.