Title :
Polarisation characteristics of a travelling-wave-type semiconductor laser amplifier
Author_Institution :
CNET, LAB/MER/FOG, Lannion, France
Abstract :
We report experimental results on the gain sensitivity of a travelling-wave-type (TW) AlGaAs semiconductor laser amplifier to the input signal polarisation state.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; light polarisation; semiconductor junction lasers; AlGaAs semiconductor laser amplifier; gain sensitivity; input signal polarisation state; polarisation characteristics; travelling-wave-type semiconductor laser amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820298
