Title :
Ga0.51In0.49P channel MESFET
Author :
Hashemi, Mahmood ; Kiziloglu, K. ; Shealy, James B. ; DenBaars, Steven P. ; Mishra, Umesh K.
Author_Institution :
Phoenix Corporate Res. Lab., Motorola Inc., Tempe, AZ, USA
Abstract :
High bandgap materials are extremely important for high temperature and high power electronic applications. GaInP is an attractive large bandgap material because it can be grown lattice matched to GaAs. The authors report the first GaInP channel MESFET. The material was grown by a non-hydride MOCVD technique using TBP as the phosphorus source. A 1 mu m gate length device had a drain current density of 300mA/mm, an extrinsic transconductance of 70mS/mm, a gate-drain breakdown voltage of 17V, with an fT and fmax of 10 and 25GHz, respectively.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium compounds; indium compounds; power transistors; 1 micron; 10 GHz; 25 GHz; 70 mS; Ga 0.51In 0.49P; GaInP channel MESFET; P source; TBP; drain current density; extrinsic transconductance; gate-drain breakdown voltage; high power electronic applications; high temperature; large bandgap material; nonhydride MOCVD technique;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931440
