Title :
Experimental comparison of a germanium avalanche photodiode and InGaAs PINFET receiver for longer wavelength optical communication systems
Author :
Smith, David R. ; Hooper, R.C. ; Smyth, P.P. ; Wake, D.
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Abstract :
The receiver sensitivity of an InGaAs PIN photodiode-GaAs MESFET hybrid optical receiver is compared experimentally with that of a germanium avalanche photodiode from 34 to 565 Mbit/s and over the temperature range 20 to 60°C.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; avalanche photodiodes; elemental semiconductors; gallium arsenide; germanium; hybrid integrated circuits; indium compounds; optical communication equipment; photodiodes; 20 to 60 degrees C; 34 to 565 Mbit/s; Ge avalanche photodiode; InGaAs PIN photodiode-GaAs MESFET hybrid receiver; InGaAs PINFET receiver; MESFET; optical communication systems; p-i-n photodiode; sensitivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820308
