Title :
1.5 ¿m GaInAsP/InP distributed Bragg reflector lasers with built-in optical waveguide
Author :
Mikami, O. ; Saitoh, T. ; Nakagome, H.
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
Room-temperature operation of distributed Bragg reflector (DBR) lasers emitting at 1.5 ¿m is reported. The diode was fabricated by conventional techniques and has a simple configuration with a built-in waveguide grown by single-step liquid-phase epitaxy. Single-longitudinal-mode oscillation at 1.504¿1.505 ¿m was obtained at temperatures between ¿10°C and 5°C with 310¿360 mA threshold current.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser modes; optical waveguides; semiconductor junction lasers; 1.5 microns wavelength; GaInAsP/InP distributed Bragg reflector lasers; built-in optical waveguide; room temperature operation; semiconductor laser; single longitudinal mode oscillation; single-step liquid-phase epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820312
