Title :
High speed, high efficiency resonant-cavity enhanced InGaAs MSM photodetectors
Author :
Strittmatter, A. ; Kollakowski, S. ; Dröge, E. ; Böttcher, E.H. ; Bimberg, D.
Author_Institution :
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
fDate :
6/20/1996 12:00:00 AM
Abstract :
Resonant-cavity-enhanced In/InGaAs metal-semiconductor-metal photodetectors designed for 1.31 μm wavelength illumination are demonstrated. The bottom mirror microcavity consists of an InGaAlAs/InAlAs buried Bragg reflector, and the top mirror comprises the interdigitated contact metallisation and a Si/SiNx quarter wave stack deposited on the surface. An external quantum efficiency of 77%, and a 3 dB bandwidth of 10 GHz, are achieved with an InGaAs absorber thickness of 300 nm
Keywords :
Fabry-Perot resonators; III-V semiconductors; gallium arsenide; indium compounds; metal-semiconductor-metal structures; optical receivers; photodetectors; 1.31 micrometre; 10 GHz; 300 nm; 77 percent; InGaAs; MSM photodetectors; absorber thickness; bottom mirror microcavity; buried Bragg reflector; external quantum efficiency; interdigitated contact metallisation; optical communications; quarter wave stack; resonant-cavity enhanced photodetectors; top mirror;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960810
