• DocumentCode
    978189
  • Title

    Ni/Ti/Pt ohmic contacts to p-GaAs for the heterojunction bipolar transistor process

  • Author

    Yanagihara, M. ; Tamura, A.

  • Author_Institution
    Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
  • Volume
    32
  • Issue
    13
  • fYear
    1996
  • fDate
    6/20/1996 12:00:00 AM
  • Firstpage
    1238
  • Lastpage
    1239
  • Abstract
    The authors have recently developed Ni/Ti/Pt ohmic contacts to p-GaAs. They exhibit the extremely low ohmic contact resistivity of 2×10-7 cm2 to a p+-GaAs layer with a doping level of 2×1019 cm3 at the annealing temperature of 400°C, which is higher than the optimised annealing temperature of the Pt ohmic contacts, and is almost equal to that of AuGe/Ni ohmic contacts to n-GaAs. The Ni/Ti/Pt ohmic contact system is very advantageous in fabricating high speed GaAs based HBTs
  • Keywords
    III-V semiconductors; annealing; contact resistance; gallium arsenide; heterojunction bipolar transistors; nickel; ohmic contacts; platinum; semiconductor-metal boundaries; titanium; 400 C; HBT process; Ni-Ti-Pt-GaAs; Ni/Ti/Pt ohmic contacts; annealing temperature; heterojunction bipolar transistor; ohmic contact resistivity; p-GaAs; p+-type layer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960770
  • Filename
    503026
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=978189