Title :
Ni/Ti/Pt ohmic contacts to p-GaAs for the heterojunction bipolar transistor process
Author :
Yanagihara, M. ; Tamura, A.
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
fDate :
6/20/1996 12:00:00 AM
Abstract :
The authors have recently developed Ni/Ti/Pt ohmic contacts to p-GaAs. They exhibit the extremely low ohmic contact resistivity of 2×10-7 cm2 to a p+-GaAs layer with a doping level of 2×1019 cm3 at the annealing temperature of 400°C, which is higher than the optimised annealing temperature of the Pt ohmic contacts, and is almost equal to that of AuGe/Ni ohmic contacts to n-GaAs. The Ni/Ti/Pt ohmic contact system is very advantageous in fabricating high speed GaAs based HBTs
Keywords :
III-V semiconductors; annealing; contact resistance; gallium arsenide; heterojunction bipolar transistors; nickel; ohmic contacts; platinum; semiconductor-metal boundaries; titanium; 400 C; HBT process; Ni-Ti-Pt-GaAs; Ni/Ti/Pt ohmic contacts; annealing temperature; heterojunction bipolar transistor; ohmic contact resistivity; p-GaAs; p+-type layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960770
