• DocumentCode
    978552
  • Title

    High-speed low-power DCFL using planar two-dimensional electron gas FET technology

  • Author

    Tung, Pham N. ; Delescluse, P. ; Delagebeaudeuf, D. ; Laviron, M. ; Chaplart, J. ; Linh, Nuyen T.

  • Author_Institution
    Thomson-CSF, Central Research Laboratory, Orsay, France
  • Volume
    18
  • Issue
    12
  • fYear
    1982
  • Firstpage
    517
  • Lastpage
    519
  • Abstract
    Planar two-dimensional electron gas FETs (TEGFETs) have been shown to have ultra-high speed and low power in DCFL circuits operating at room temperature: 18.4 ps at 900 ¿W and 32.5 ps at 62 ¿W. The latter result and the simplicity of the process involved are compatible with VLSI requirements.
  • Keywords
    field effect integrated circuits; integrated circuit technology; integrated logic circuits; large scale integration; DCFL circuits; E-JFET logic; LPFL circuits; SDFL logic; VLSI; integrated logic circuits; planar two-dimensional electron gas FET technology;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820351
  • Filename
    4246487
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=978552