• DocumentCode
    978657
  • Title

    Specific capacitance of Josephson tunnel junctions

  • Author

    Magerlein, J.H.

  • Author_Institution
    IBM Thomas J. Watson Research Center, Yorktown Heights, NY
  • Volume
    17
  • Issue
    1
  • fYear
    1981
  • fDate
    1/1/1981 12:00:00 AM
  • Firstpage
    286
  • Lastpage
    289
  • Abstract
    The specific capacitance of several types of Josephson tunnel junctions has been measured by observing resonances in lightly-damped 2-junction interferometers. The capacitance was calculated using the resonance voltage, obtained by analyzing steps in the I-V characteristics, and the interferometer inductance, which was measured directly by the injection of a control current. Using this technique, the specific capacitance Cswas determined for tunnel junctions with Pb-In-Au alloy base electrodes and Pb-Bi counterelectrodes, as well as for junctions made on Nb films with Pb-In-Au counterelectrodes. In both cases, barriers were produced by rf plasma oxidation. Junctions with Josephson current densities j1between 200 and 5000 A/cm2were investigated. It was found that 1/Csdecreased with \\log j_{1} , and that at j1= 1000 A/cm2, Cswas 4.2 ±0.3 μF/cm2for the Pb-alloy junctions and 13.4 ±1 μF/cm2for the Nb junctions. These results are discussed in relation to available data on oxide thickness and dielectric constant.
  • Keywords
    Josephson devices; Capacitance measurement; Current measurement; Electrodes; Inductance measurement; Interferometers; Niobium alloys; Oxidation; Plasma density; Resonance; Voltage control;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1981.1060968
  • Filename
    1060968