DocumentCode :
978703
Title :
An extension of the reciprocity theorem to include high-level injection conditions
Author :
Krieger, G. ; Kwark, Y.H. ; Swanson, R.M.
Author_Institution :
VLSI Technol. Inc., San Jose, CA, USA
Volume :
37
Issue :
1
fYear :
1990
fDate :
1/1/1990 12:00:00 AM
Firstpage :
319
Lastpage :
321
Abstract :
The general proof of the Ebers-Moll reciprocity theorem is extended to include high-level injection conditions in bipolar base regions. The theorem, originally derived for the low-level case, is shown to be valid in the high-level limit, as long as the emitter injection efficiency is sufficiently high in both reciprocal configurations
Keywords :
bipolar transistors; semiconductor device models; Ebers-Moll reciprocity theorem; bipolar base regions; emitter injection efficiency; high-level injection conditions; reciprocal configurations; Calibration; Capacitance; Data mining; Electron devices; Equations; Geometry; P-n junctions; Photonic band gap; Testing; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.43838
Filename :
43838
Link To Document :
بازگشت