DocumentCode
978766
Title
Channel waveguides formed by ion implantation of 20 mol% Ge-doped silica
Author
Leech, Patrick W. ; Faith, M. ; Ridgway, M.C. ; Leistiko, O.
Author_Institution
Telstra Res. Lab., Clayton, Vic.
Volume
32
Issue
11
fYear
1996
fDate
5/23/1996 12:00:00 AM
Firstpage
1000
Lastpage
1002
Abstract
The implantation of 20% Ge-doped silica with MeV Si or Ge ions has been used to produce singlemode channel waveguides. The germanosilicate film was grown by plasma enhanced chemical vapour deposition. For implantation with either Si or Ge ions, the attenuation loss was measured as 0.15-0.25 dB/cm at 1300 nm and 1.5-1.8 dB/cm at 1550 nm
Keywords
germanium; integrated optics; ion implantation; optical glass; optical loss measurement; optical waveguides; plasma CVD; 1300 nm; 1550 nm; Ge-doped silica; MeV Ge ions; MeV Si ions; attenuation loss measurement; channel waveguides; germanosilicate film; ion implantation; plasma enhanced chemical vapour deposition; singlemode channel waveguides;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19960684
Filename
503080
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