Title :
Channel waveguides formed by ion implantation of 20 mol% Ge-doped silica
Author :
Leech, Patrick W. ; Faith, M. ; Ridgway, M.C. ; Leistiko, O.
Author_Institution :
Telstra Res. Lab., Clayton, Vic.
fDate :
5/23/1996 12:00:00 AM
Abstract :
The implantation of 20% Ge-doped silica with MeV Si or Ge ions has been used to produce singlemode channel waveguides. The germanosilicate film was grown by plasma enhanced chemical vapour deposition. For implantation with either Si or Ge ions, the attenuation loss was measured as 0.15-0.25 dB/cm at 1300 nm and 1.5-1.8 dB/cm at 1550 nm
Keywords :
germanium; integrated optics; ion implantation; optical glass; optical loss measurement; optical waveguides; plasma CVD; 1300 nm; 1550 nm; Ge-doped silica; MeV Ge ions; MeV Si ions; attenuation loss measurement; channel waveguides; germanosilicate film; ion implantation; plasma enhanced chemical vapour deposition; singlemode channel waveguides;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960684
